TPN2R503NC,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN2R503NC,L1Q

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Package:

8-TSON Advance (3.1x3.1)

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Description:

MOSFET N CH 30V 40A 8TSON-ADV

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 500µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 35W (Tc)
Series	U-MOSVIII
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPN2R503