TPW2900ENH,L1Q

Toshiba Semiconductor and Storage

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TPW2900ENH,L1Q

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8-DSOP Advance

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Description:

PB-F POWER MOSFET TRANSISTOR DSO

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	29mOhm @ 16.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)