XPH2R106NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPH2R106NC,L1XHQ

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Package:

8-SOP Advance (5x5)

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Description:

MOSFET N-CH 60V 110A 8SOP

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.1mOhm @ 55A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Series	Automotive, AEC-Q101, U-MOSVIII-H
Package / Case	8-SOIC (0.197", 5.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	110A (Ta)
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	XPH2R106