XPH4R10ANB,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPH4R10ANB,L1XHQ

Manufacturer:

Package:

8-SOP Advance (5x5)

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 70A 8SOP

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Series	U-MOSVIII-H
Package / Case	8-SOIC (0.197", 5.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	70A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPH4R10