XPJR6604PB,LXHQ

Toshiba Semiconductor and Storage

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XPJR6604PB,LXHQ

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Package:

S-TOGL™

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Description:

40V; UMOS9; 0.66MOHM; S-TOGL

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	128 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.66mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	S-TOGL™
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	375W (Tc)
Series	Automotive, AEC-Q101, U-MOSIX-H
Package / Case	5-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)