XPN12006NC,L1XHQ

Toshiba Semiconductor and Storage

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XPN12006NC,L1XHQ

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8-TSON Advance-WF (3.1x3.1)

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Description:

MOSFET N-CH 60V 20A 8TSON

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Operating Temperature	-55°C ~ 175°C
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 200µA
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	65W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	20A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPN12006