XPQR3004PB,LXHQ

Toshiba Semiconductor and Storage

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XPQR3004PB,LXHQ

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L-TOGL™

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Description:

40V U-MOS IX-H L-TOGL 0.3MOHM

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	26910 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	295 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.3mOhm @ 200A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	L-TOGL™
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	750W (Tc)
Series	Automotive, AEC-Q101, U-MOSIX-H
Package / Case	8-PowerBSFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	400A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPQR3004