XPW4R10ANB,L1XHQ

Toshiba Semiconductor and Storage

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XPW4R10ANB,L1XHQ

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8-DSOP Advance

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Description:

MOSFET N-CH 100V 70A AEC-Q101

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Operating Temperature	-55°C ~ 175°C
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	170W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	70A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)