XPW6R30ANB,L1XHQ

Toshiba Semiconductor and Storage

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XPW6R30ANB,L1XHQ

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8-DSOP Advance

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MOSFET N-CH 100V 45A 8DSOP

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 500µA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPW6R30