2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

Product No:

2SJ668(TE16L1,NQ)

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Package:

PW-MOLD

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Description:

MOSFET P-CHANNEL 60V 5A PW-MOLD

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	170mOhm @ 2.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	PW-MOLD
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	20W (Tc)
Series	U-MOSIII
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	2SJ668