2SK1119(F)

Toshiba Semiconductor and Storage

Product No:

2SK1119(F)

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Package:

TO-220AB

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Description:

MOSFET N-CH 1000V 4A TO220AB

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.8Ohm @ 2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	100W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK1119