2SK3309(Q)

Toshiba Semiconductor and Storage

Product No:

2SK3309(Q)

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Package:

TO-220FL

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Description:

MOSFET N-CH 450V 10A TO220FL

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	650mOhm @ 5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	TO-220FL
Drain to Source Voltage (Vdss)	450 V
Power Dissipation (Max)	65W (Tc)
Series	-
Package / Case	TO-220-3, Short Tab
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK3309