2SK3700(F)

Toshiba Semiconductor and Storage

Product No:

2SK3700(F)

Manufacturer:

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 900V 5A TO3P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Package	Bulk
Base Product Number	2SK3700