BSC059N03ST

Infineon Technologies

Product No:

BSC059N03ST

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Package:

PG-TDSON-8-1

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Description:

MOSFET N-CH 30V 19A/89A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5mOhm @ 50A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2V @ 35µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	-
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 89A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)