BSC883N03MSGATMA1

Infineon Technologies

Product No:

BSC883N03MSGATMA1

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Package:

PG-TDSON-8-1

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Description:

MOSFET N-CH 34V 19A/98A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.8mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	34 V
Power Dissipation (Max)	2.5W (Ta), 57W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 98A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)