BSS139 E6327

Infineon Technologies

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BSS139 E6327

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PG-SOT23

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Description:

MOSFET N-CH 250V 100MA SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	76 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14Ohm @ 0.1mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 56µA
Supplier Device Package	PG-SOT23
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	360mW (Ta)
Series	SIPMOS®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Package	Tape & Reel (TR)