BSS806NL6327HTSA1

Infineon Technologies

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BSS806NL6327HTSA1

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Package:

PG-SOT23

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Description:

MOSFET N-CH 20V 2.3A SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	529 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 2.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	57mOhm @ 2.3A, 2.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	750mV @ 11µA
Supplier Device Package	PG-SOT23
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	OptiMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Package	Tape & Reel (TR)