BSZ165N04NSGATMA1

Infineon Technologies

Product No:

BSZ165N04NSGATMA1

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Package:

PG-TSDSON-8

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Description:

MOSFET N-CH 40V 8.9A/31A TSDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	16.5mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 10µA
Supplier Device Package	PG-TSDSON-8
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.1W (Ta), 25W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.9A (Ta), 31A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)