BUK752R3-40E,127

NXP Semiconductors

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BUK752R3-40E,127

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TO-220AB

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NEXPERIA BUK752R3-40E - 120A, 40

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	109.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	293W (Ta)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Vgs (Max)	±20V
Package	Bulk