BUK7C10-75AITE,118

NXP Semiconductors

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BUK7C10-75AITE,118

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D2PAK-7

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NEXPERIA BUK7C10-75 - 75A, 75V,

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Current Sensing
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	D2PAK-7
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	272W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk