BUK7Y20-30B,115

NXP Semiconductors

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BUK7Y20-30B,115

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LFPAK56, Power-SO8

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Description:

MOSFET N-CH 30V 39.5A LFPAK56

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	688 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	59W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	39.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk