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IPB093N04LGATMA1

Infineon Technologies

Product No:

IPB093N04LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 40V 50A D2PAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 16µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 47W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB093N