IPB100P03P3L-04

Infineon Technologies

Product No:

IPB100P03P3L-04

Manufacturer:

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

P-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	9300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.3mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 475µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	200W (Tc)
Series	OptiMOS™-P
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	+5V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk