IPB180N03S4L-H0

Infineon Technologies

Product No:

IPB180N03S4L-H0

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Package:

PG-TO263-7-3-10

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Description:

IPB180N03 - 20V-40V N-CHANNEL AU

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	23000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.95mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 200µA
Supplier Device Package	PG-TO263-7-3-10
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	250W (Tc)
Series	CoolMOS™
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk
Base Product Number	IPB180