IPD100N04S4L02ATMA1

Infineon Technologies

Product No:

IPD100N04S4L02ATMA1

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Package:

PG-TO252-3-313

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Description:

MOSFET N-CHANNEL_30/40V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	156 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 95µA
Supplier Device Package	PG-TO252-3-313
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	150W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD100