IPD30N06S2L13ATMA1

Infineon Technologies

Product No:

IPD30N06S2L13ATMA1

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Package:

PG-TO252-3-11

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Description:

IPD30N06 - 55V-60V N-CHANNEL AUT

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 80µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	136W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk