IPDD60R102G7XTMA1

Infineon Technologies

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IPDD60R102G7XTMA1

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Package:

PG-HDSOP-10-1

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Description:

IPDD60R102 - HIGH POWER_NEW

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	102mOhm @ 7.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 390µA
Supplier Device Package	PG-HDSOP-10-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	139W (Tc)
Series	CoolMOS™ G7
Package / Case	10-PowerSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk