IPDQ60R022S7XTMA1

Infineon Technologies

Product No:

IPDQ60R022S7XTMA1

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Package:

PG-HDSOP-22-1

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Description:

HIGH POWER_NEW PG-HDSOP-22

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5639 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 12 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22mOhm @ 23A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1.44mA
Supplier Device Package	PG-HDSOP-22-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	416W (Tc)
Series	CoolMOS™ S7
Package / Case	22-PowerBSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tape & Reel (TR)
Base Product Number	IPDQ60R