IPI023NE7N3 G

Infineon Technologies

Product No:

IPI023NE7N3 G

Manufacturer:

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 75V 120A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.8V @ 273µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Package	Tube
Base Product Number	IPI023N