IPI034NE7N3G

Infineon Technologies

Product No:

IPI034NE7N3G

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Package:

PG-TO262-3

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8130 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 155µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Package	Bulk