IPL60R180P6AUMA1

Infineon Technologies

Product No:

IPL60R180P6AUMA1

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Package:

PG-VSON-4

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Description:

HIGH POWER_LEGACY

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 750µA
Supplier Device Package	PG-VSON-4
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	176W (Tc)
Series	CoolMOS™ P6
Package / Case	4-PowerTSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	22.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk