IPL65R650C6SATMA1

Infineon Technologies

Product No:

IPL65R650C6SATMA1

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Package:

PG-TSON-8-2

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Description:

MOSFET N-CH 650V 6.7A THIN-PAK

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 210µA
Supplier Device Package	PG-TSON-8-2
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	56.8W (Tc)
Series	CoolMOS™ C6
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPL65R650