IPP06CN10LG

Infineon Technologies

Product No:

IPP06CN10LG

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Package:

PG-TO220-3-1

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	124 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.2mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 180µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™ 2
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk