IPP114N12N3G

Infineon Technologies

Product No:

IPP114N12N3G

Manufacturer:

Package:

PG-TO220-3-1

Batch:

Datasheet:

Description:

IPP114N12 - 12V-300V N-CHANNEL P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11.4mOhm @ 75A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 83µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	136W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk