IPS110N12N3GBKMA1

Infineon Technologies

Product No:

IPS110N12N3GBKMA1

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Package:

PG-TO251-3-11

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Description:

MOSFET N-CH 120V 75A TO251-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11mOhm @ 75A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 83µA
Supplier Device Package	PG-TO251-3-11
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	136W (Tc)
Series	OptiMOS™
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube