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IPSH5N03LA G

Infineon Technologies

Product No:

IPSH5N03LA G

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3-11

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 25V 50A TO251-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 5.4mOhm @ 50A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 35µA
Supplier Device Package PG-TO251-3-11
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 83W (Tc)
Series OptiMOS™
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number IPSH5N