IPW60R160C6FKSA1

Infineon Technologies

Product No:

IPW60R160C6FKSA1

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Package:

PG-TO247-3-1

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Description:

MOSFET N-CH 600V 23.8A TO247-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	160mOhm @ 11.3A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 750µA
Supplier Device Package	PG-TO247-3-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	176W (Tc)
Series	CoolMOS™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	23.8A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPW60R160