IPW65R190E6

Infineon Technologies

Product No:

IPW65R190E6

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Package:

PG-TO247-3-41

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 730µA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	151W (Tc)
Series	CoolMOS™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk