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IPZ65R065C7XKSA1

Infineon Technologies

Product No:

IPZ65R065C7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 33A TO247-4

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 850µA
Supplier Device Package PG-TO247-4
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 171W (Tc)
Series CoolMOS™ C7
Package / Case TO-247-4
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPZ65R065