IQE008N03LM5CGATMA1

Infineon Technologies

Product No:

IQE008N03LM5CGATMA1

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Package:

PG-TTFN-9-1

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Description:

TRENCH <= 40V PG-TTFN-9

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	0.85mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TTFN-9-1
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 253A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE008N