IRF5802

Infineon Technologies

Product No:

IRF5802

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Package:

Micro6™(TSOP-6)

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Description:

MOSFET N-CH 150V 900MA MICRO6

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FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 540mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	Micro6™(TSOP-6)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2W (Ta)
Series	HEXFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube