IRF5805TRPBF-INF

Infineon Technologies

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IRF5805TRPBF-INF

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Micro6™(TSOP-6)

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Description:

IRF5805 - TRANSISTOR

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	511 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	98mOhm @ 3.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	Micro6™(TSOP-6)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta)
Series	HEXFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk