IRF6602

Infineon Technologies

Product No:

IRF6602

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Package:

DIRECTFET™ MQ

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Description:

MOSFET N-CH 20V 11A DIRECTFET

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FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 11A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 250µA
Supplier Device Package	DIRECTFET™ MQ
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.3W (Ta), 42W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric MQ
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 48A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)