IRF6614TR1PBF

Infineon Technologies

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IRF6614TR1PBF

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DIRECTFET™ ST

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Description:

MOSFET N-CH 40V 12.7A DIRECTFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.3mOhm @ 12.7A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.25V @ 250µA
Supplier Device Package	DIRECTFET™ ST
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric ST
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12.7A (Ta), 55A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)