IRF6614TRPBF

Infineon Technologies

Product No:

IRF6614TRPBF

Manufacturer:

Package:

DIRECTFET™ ST

Batch:

Datasheet:

Description:

IRF6614 - 12V-300V N-CHANNEL POW

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.3mOhm @ 12.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.25V @ 250µA
Supplier Device Package	DIRECTFET™ ST
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric ST
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12.7A (Ta), 55A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk