IRF6617TRPBF

Infineon Technologies

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IRF6617TRPBF

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DIRECTFET™ ST

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IRF6617 - 12V-300V N-CHANNEL POW

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.1mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.35V @ 250µA
Supplier Device Package	DIRECTFET™ ST
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric ST
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 55A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk