IRF6644TR1PBF

Infineon Technologies

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IRF6644TR1PBF

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DIRECTFET™ MN

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Description:

MOSFET N-CH 100V 10.3A DIRECTFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 10.3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.8V @ 150µA
Supplier Device Package	DIRECTFET™ MN
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric MN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	10.3A (Ta), 60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)