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IRF6665

Infineon Technologies

Product No:

IRF6665

Manufacturer:

Infineon Technologies

Package:

DIRECTFET™ SH

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 4.2A DIRECTFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package DIRECTFET™ SH
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Series -
Package / Case DirectFET™ Isometric SH
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube