IRF6709S2TR1PBF

Infineon Technologies

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IRF6709S2TR1PBF

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DirectFET™ Isometric S1

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Description:

MOSFET N-CH 25V 12A DIRECTFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1010 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.8mOhm @ 12A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 25µA
Supplier Device Package	DirectFET™ Isometric S1
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	1.8W (Ta), 21W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric S1
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 39A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)