IRF7322D1PBF

Infineon Technologies

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IRF7322D1PBF

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8-SO

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Description:

MOSFET P-CH 20V 5.3A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	62mOhm @ 2.9A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2W (Ta)
Series	FETKY™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Package	Tube